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| (R) HCF4503 HEX BUFFER 1 TTL-LOAD OUTPUT DRIVE CAPABILITY 2 OUTPUT-DISABLE CONTROLS s 3 STATE OUTPUTS s 5V, 10V, AND 15V PARAMETRIC RATINGS s QUIESCENT CURRENT SPECIFIED UP TO 15V s INPUT CURRENT OF 300nA AT 15V AND 25C s 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC TENTATIVE STANDARD N0. 13A, "STANDARD SPECIFICATIONS FOR DESCRIPTION OF "B" SERIES CMOS DEVICES" s s DIP ORDER CODES PACKAGE DIP SOP TUBE HCF4503BEY HCF4503BM1 SOP T&R HCF4503M013TR DESCRIPTION The HCF4503B is a monolithic integrated circuits, available in 16-lead dual in-line plastic package and plastic micro package. The HCF4503B is a hex noninverting buffer with 3-state outputs having high sink and source-current capability. Two disable controls are provided, one of which controls four buffers and the other controls the remaining two buffers. PIN CONNECTION February 2000 1/10 HCF4503B FUNCTIONAL DIAGRAM ABSOLUTE MAXIMUM RATING Symbol VDD * Vi II Ptot Supply Voltage Input Voltage DC Input Current (any one input) Total Power Dissipation (per package) Dissipation per Output Transistor for Top = Full Package Temperature Range Operating Temperature Storage Temperature Parameter Value -0.5 to +18 -0.5 to VDD + 0.5 10 200 100 -40 to +85 -65 to +150 Unit V V mA mW mW o o Top Tstg C C Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability. * All voltage values are referred to VSS pin voltage. RECOMMENDED OPERATING CONDITIONS Symbol VDD VI Top Supply Voltage Input Voltage Operating Temperature Parameter Value 3 to 15 0 to VDD -40 to +85 Unit V V o C 2/10 HCF4503B LOGIC DIAGRAM AND TRUTH TABLE DN 0 1 X DIS A (B) 0 0 1 QN 0 1 High Z X = Don't care 3/10 HCF4503B STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions) Symbol Parameter VI (V) IL Quiescent Current 0/5 0/10 0/15 VOH Output High Voltage Output Low Voltage Input High Voltage Input Low Voltage Output Drive Current 0/5 0/5 0/10 0/15 IOL Output Sink Current 0/5 0/10 0/15 0/15 0/15 0/5 0/10 0/15 5/0 10/0 15/0 VIH 0.5/4.5 1/9 1.5/13.5 VIL 4.5/0.5 9/1 13.5/1.5 2.5 4.6 9.5 13.5 0.4 0.5 1.5 Any Input Any Input Any Input <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 Test Conditios VO (V) Value Unit 25 o C 85 o C |I O | V DD -40 o C (A) (V) Min. Max. Min. Typ. Max. Min. Max. 5 10 15 5 10 15 5 10 15 5 10 15 5 10 15 5 5 10 15 5 10 15 15 15 -4.8 -1 -2.5 -6.8 2.1 5.4 16 0.3 1.0 3.5 7 11 1.5 3 4 -4.1 -0.8 -2.2 -5.8 1.8 4.7 13.7 -5.2 -1.6 -3.1 -11.9 1.9 5.3 19.5 10 -5 4 8 16 4.95 9.95 14.95 0.05 0.05 0.05 3.5 7 11 4.95 9.95 14.95 0.02 0.02 0.02 4 8 16 4.95 9.95 14.95 0.05 0.05 0.05 3.5 7 11 1.5 3 4 -2.9 -0.6 -1.6 -4.2 1.2 3.3 9.7 0.3 30 60 120 V 0.05 0.05 0.05 V 1.5 3 4 mA V A VOL V IOH mA IIH, IIL IOZ CI Input Leakage Current 3-state Output Leakage Current Input Capacitance 1 7.5 A A pF 10 -4 1.0 5 7.5 The Noise Margin for both "1" and "0" level is: 1V min. with VDD = 5 V, 2 V min. with VDD = 10 V, 2.5 V min. with VDD = 15 V 4/10 HCF4503B DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25 oC, CL = 50 pF, RL = 200 K, typical temperature coefficent for all VDD values is 03 %/oC, all input rise and fall times= 20 ns) Symbol Parameter Test Conditions V DD (V) 5 10 15 5 10 15 5 10 15 5 10 15 5 10 15 5 10 15 Min. Value Typ. 75 35 25 55 25 17 70 30 25 90 40 35 50 30 25 35 20 13 Unit Max. 150 70 50 110 50 35 140 60 50 180 80 70 90 45 35 70 40 25 tPLH Propagation Delay Time ns tPHL Propagation Delay Time ns tPHZ tPZH tPZL tPLZ tTLH 3-State Propagation Delay Time ns 3-State Propagation Delay Time ns Transition Time ns tTHL Transition Time ns N-Channel Output Low (sink) Current Characteristics. P-Channel Output High (source) Current Characteristics. 5/10 HCF4503B Typical Propagation Delay Time vs. Load Capacitance. Typical Transition Time vs. Load Capacitance. Typical Dynamic Power Dissipation vs. TEST CIRCUITS Quiescent Device Current. Input Voltage. 6/10 HCF4503B TEST CIRCUIT (continued) Input Leakage Current. Dynamic Power Dissipation. 7/10 HCF4503B Plastic DIP-14 MECHANICAL DATA mm MIN. a1 B b b1 D E e e3 F I L Z 1.27 3.3 2.54 0.050 8.5 2.54 15.24 7.1 5.1 0.130 0.100 0.51 1.39 0.5 0.25 20 0.335 0.100 0.600 0.280 0.201 1.65 TYP. MAX. MIN. 0.020 0.055 0.020 0.010 0.787 0.065 inch TYP. MAX. DIM. P001A 8/10 HCF4503B SO-14 MECHANICAL DATA DIM. MIN. A a1 a2 b b1 C c1 D E e e3 F G L M S 3.8 4.6 0.5 8.55 5.8 1.27 7.62 4.0 5.3 1.27 0.68 8 (max.) 0.149 0.181 0.019 8.75 6.2 0.35 0.19 0.5 45 (typ.) 0.336 0.228 0.050 0.300 0.157 0.208 0.050 0.026 0.344 0.244 0.1 mm TYP. MAX. 1.75 0.2 1.65 0.46 0.25 0.013 0.007 0.019 0.003 MIN. inch TYP. MAX. 0.068 0.007 0.064 0.018 0.010 P013G 9/10 HCF4503B Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . 10/10 |
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